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RT Book, Whole SR Electronic DC OPAC T1 Strain-engineered MOSFETs / C.K. Maiti, T.K. Maiti A1 Maiti, C. K. A1 Maiti, T. K. YR 2013 FD ©2013 SP 1 online resource K1 Electronic books K1 Electronic books K1 Metal oxide semiconductor field-effect transistors -- Reliability K1 Integrated circuits -- Fault tolerance K1 Strains and stresses K1 TECHNOLOGY & ENGINEERING -- Electronics -- Circuits -- General K1 TECHNOLOGY & ENGINEERING -- Electronics -- Microelectronics K1 TECHNOLOGY & ENGINEERING -- Material Science K1 TECHNOLOGY & ENGINEERING -- Electronics -- Transistors K1 Integrated circuits -- Fault tolerance K1 Strains and stresses PB Taylor & Francis PP Boca Raton, FL SN 9781466503472 SN 1466503475 LA English (英語) CL DC23:621.3815/284 NO "This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"-- Provided by publisher NO Open Access NO Includes bibliographical references and index NO Print version record NO 書誌ID=ED00001263; LK [E Book]https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=513755 OL 30